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| RO-P-DS-3046 - - 0.4W Variable Distributed Amplifier 1.0 - 15.0 GHz Preliminary Information MAAMGM0003-DIE Features 1.0 - 15.0 GHz GaAs MMIC Amplifier 1.0 to 15.0 GHz Operation 0.4 Watt Saturated Output Power Level Variable Gain Control Select at Test Biasing Variable Drain Voltage (5-8V) Operation Self-Aligned MSAG(R) MESFET Process Primary Applications EW Radar Description The MAAMGM0003-DIE is a 0.4W Distributed Amplifier with on-chip bias networks and variable gain control. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/ A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG(R)) MESFET Process. This process features silicon oxyni- Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 7V, VGG = -2V, Pin = 20 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Output TOI Input VSWR Gate Current Drain Current 1. TB = MMIC Base Temperature Symbol f POUT PAE P1dB G OTOI VSWR IGG IDD Typical 1.0-15.0 26 11 25 7.5 39 2:1 <8 < 480 mA mA Units GHz dBm % dBm dB dBm RO-P-DS-3046 - - 2/7 0.4W Variable Distributed Amplifier Maximum Operating Conditions 1 Parameter Input Power Drain Voltage Gate Voltage, Primary Gate Voltage, Select at Test Gate Voltage, Control Quiescent Drain Current (No RF) Quiescent DC Power Dissipation (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG HI, MID, LO GATE IDQ PDISS TJ TSTG MAAMGM0003-DIE Absolute Maximum 25 +8.0 -3.0 -5.0 0 420 3.4 180 -55 to +150 Units dBm V V V V mA W C C 1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Drain Voltage Gate Voltage, Primary Gate Voltage, Select at Test Gate Voltage, Control Input Power Junction Temperature MMIC Base Temperature Symbol VDD VGG HI, MID, LO GATE PIN TJ TB -4 Min 5 -2.4 Typ 7 -2.0 -5.0 0 0 23 150 Note 2 Max 8 -1.6 Unit V V V V dBm C C 2. Maximum MMIC Base Temperature = 150C -- 25.8 C/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 5 V. 3. Adjust VGG to set IDQ, (approximately @ -2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 3/7 0.4W Variable Distributed Amplifier MAAMGM0003-DIE 40 35 30 25 20 15 10 5 0 1 3 5 7 9 11 13 15 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 7V, Pin = 20dBm. POUT PAE 40 35 POUT PAE 30 25 20 15 10 5 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Drain Voltage (volts) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 9 GHz. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 4/7 0.4W Variable Distributed Amplifier MAAMGM0003-DIE 40 35 30 25 20 15 10 5 1 3 5 7 9 11 13 15 Frequency (GHz) VDD = 6 VDD = 5 VDD = 8 VDD = 7 Figure 3. 1dB Compression Point vs. Drain Voltage 10 GAIN 9 8 7 6 5 4 3 2 1 0 1 3 5 7 9 11 13 15 VSWR 6 5 4 3 2 1 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 7V. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 5/7 0.4W Variable Distributed Amplifier MAAMGM0003-DIE 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 1 3 5 7 9 11 13 15 Frequency (GHz) GATE=0V GATE=-2V GATE=-4V Figure 5. Small Signal Gain vs. Frequency at MID=-5V, VDD = 5V. 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -4.0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 GATE Voltage (V) Figure 6. Small Signal Gain vs. GATE Voltage at fo = 9.05 GHz, MID=-5V, VDD = 5V. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 6/7 0.4W Variable Distributed Amplifier MAAMGM0003-DIE Mechanical Information Chip Size: 2.98 x 2.48 x 0.075 mm 0.622mm. VDD (118 x 98 x 3 mils) 2.145mm. 2.980mm. 2.480mm. 2.853mm. 2.328mm. GATE OUT 2.004mm. 0.469mm. IN 0.152mm. 0 HI MID LO VGG GND 0.127mm. 1.325mm. 1.625mm. 2.050mm. 2.225mm. 2.525mm. 0 Figure 7. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 150 x 150 150 x 150 Size (mils) 4x8 6x6 6x6 Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 7/7 0.4W Variable Distributed Amplifier VDD 0.1 F 0.1 F MAAMGM0003-DIE Gate Control 100 pF 100 pF VDD GATE RFOUT OUT RFIN IN HI MID LO VGG GND Pad 100 pF Applied Voltage (V) -5 -5 -5 -2.4 to -1.6 -4.0 to 0.0 % IDSS ~50 ~35 ~25 Variable n/a HI VGG 0.1 F MID LO VGG GATE Figure 8. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. |
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